EIS Investigation of Laser Induced Surface Microstructure on Silicon

Abstract

Silicon is one of the most important semiconductor materials which there are many researches about it and there are many researches works under operation on it now. One of the interesting matters of those researches is changing the surface properties of the silicon in order to obtain different applications of it. In this way, creating self-organized microstructure on silicon surface using laser in Halogen content gases atmospheres was a matter which was done in recent years. In this work, we have used of the experimental results of EIS (Electrical Impedance Spectroscopy) for created microstructures on silicon surfaces using ArF Excimer laser at different pressures SF6 atmospheres. Then, based on the existed theories we have driven some important properties such as conductance and relaxation time of the carriers.